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Density-Gradient Based Quantum Analysis of Nanowire Transistor

Andrew D. Adams, Satyendra N. Biswas

Abstract


The semiconductor devices scaling are changing very rapidly, which has triggered a non-conventional physical effect called quantum confinement. This dominant effect must need to be considered for submicron transistor modeling. The conventional drift–diffusion (DD) models are not suitable and accurate for analyzing the carrier distribution, energy levels and spatial confinement. This paper concentrates on employing Density-Gradient (DG) based quantum model for analyzing 3-D nanowire transistors made out of silicon and germanium. COMSOL Multiphysics 6.3 [1] has been used as simulation software. Extensive Simulation results reveal increased threshold voltage due to quantum effect, higher electron density at the center, and strong electrostatic control for the gate-all-around (GAA) structure.


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References


COMSOL Multiphysics v6.3, Semiconductor Module User’s Guide, COMSOL-2024.

F. Settino, M. Lanuzza, S. Strangio, F. Crupi, P. Palestri, D. Esseni, and L. Selmi, “Understanding the potential and limitations of tunnel FETs for low voltage analog/mixed-signal circuits”, IEEE Trans. Electron Devices, vol. 64, pp, 2736–2743, 2017.

T. Dutta, C. Medina-Bailon, F. Adamu-Lema, A. Rezaei, D. Nagy,N. Xeni, Y. Abourrig, N. Kumar, V. P. Georgiev, and A. Asenov,“TCAD Simulation of Novel Semiconductor Devices,” in 14th IEEEInternational Conference on ASIC (ASICON), 2021.

G. Baccarani, E. Gnani, A. Gnudi, S. Reggiani, and M. Rudan, “The-oretical foundations of the quantum drift-diffusion and density-gradientmodels,” Solid-state electronics, vol. 52, no. 4, pp. 526–532, 2008.

C. Medina-Bailon, T. Dutta, F. Adamu-Lema, A. Rezaei, D. Nagy,V. P. Georgiev, and A. Asenov, “Nano-Electronic Simulation Software(NESS): a Novel Open-Source TCAD Simulation Environment,” Journalof Microelectronic Manufacturing, vol. 3, no. 4, p. 20030404, 2020.

M. G. Ancona, “Equations of state for silicon inversion layers,” IEEETransactions on Electron Devices, vol. 47, no. 7, pp. 1449–1456, 2000.

S. Berrada, H. Carrillo-Nunez, J. Lee, C. Medina-Bailon, T. Dutta,O. Badami, F. Adamu-Lema, V. Thirunavukkarasu, V. Georgiev, andA. Asenov, “Nano-electronic Simulation Software (NESS): a flexiblenano-device simulation platform,” J. of Comput. Electron., vol. 19, pp.1031–1046, 2020.

C. Medina-Bailon, T. Dutta, A. Rezaei, D. Nagy, F. Adamu-Lema, V. P.Georgiev, and A. Asenov, “Simulation and modeling of novel electronicdevice architectures with NESS (nano-electronic simulation software):A modular nano TCAD simulation framework,” Micromachines, vol. 12,no. 6, 2021.

Pezzimenti F., Bencherif H., Yousfi A., Dehimi L. Current-voltage analytical model and multiobjective optimization of design of a short channel gate-all-around-junctionless mosfet. Solid-State Electron. 2019;161:107642. doi: 10.1016/j.sse.2019.

A. Wettstein, A. Schenk, and W. Fichtner, “Quantum device-simulationwith the density-gradient model on unstructured grids,” IEEE Transac-tions on Electron Devices, vol. 48, no. 2, pp. 279–284, 2001.


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