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High-Efficiency On-Board Chargers Using SiC and GaN Devices
Abstract
This paper reviews recent advances in on-board chargers (OBCs) for electric vehicles (EVs) that leverage wide-bandgap (WBG) semiconductors — silicon carbide (SiC) and gallium nitride (GaN) — and presents a detailed design and analysis of a high-efficiency, compact OBC targeting 6.6 kW single-phase/three-phase operation with bidirectional capability. We compare SiC and GaN device tradeoffs, present suitable converter topologies, discuss gate-driver and EMI considerations, and provide a system-level co-design methodology to realize >97% peak efficiency and high power density. Example loss calculations, thermal management approach, and control strategy (including power factor correction and bidirectional control) are provided. The paper synthesizes recent literature and application guidance to provide a practical engineering roadmap for researchers and industry designer.
References
A. R. Dar et al., “On-Board Chargers for Electric Vehicles: A Comprehensive Review,” Energies, 2024.
A. Reali et al., “Development of GaN-Based, 6.6 kW, 450 V, Bi-Directional OBC,” MDPI / PMC, 2024.
Texas Instruments, “Performance and benefits of GaN versus SiC” (application note).
IEA / Application Readiness Map for WBG Semiconductor Based Applications, 2023.
G. Han et al., “Strategies and Challenges in SiC and GaN Power Devices,” MDPI Electronics, 2025.
A. R. Dar et al., “Onboard Chargers for Electric Vehicles: A Comprehensive Review,” Energies, 2024.
A. Reali et al., “Development of GaN-Based, 6.6 kW, 450 V, Bi-Directional OBC,” Electronics, 2024.
Texas Instruments, “Performance and Benefits of GaN vs SiC,” App Note, 2024.
G. Han et al., “Strategies and Challenges in SiC and GaN Power Devices,” Electronics, 2025.
IEA, “Application Readiness Map for WBG Power Electronics,” 2023.
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